STMicroelectronicsSTN1HNK60MOSFETs
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 0.4 | |
| 8500@10V | |
| 7@10V | |
| 7 | |
| 156@25V | |
| 3300 | |
| 25 | |
| 5 | |
| 19 | |
| 6.5 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.8(Max) |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Compared to traditional transistors, STN1HNK60 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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