STMicroelectronicsSTGD5NB120SZT4Puce IGBT
Trans IGBT Chip N-CH 1200V 10A 75W 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 1200 | |
| 1.3 | |
| 10 | |
| 0.1 | |
| 75 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) mm |
| Largeur du paquet | 6.2(Max) mm |
| Longueur du paquet | 6.6(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
This fast-switching STGD5NB120SZT4 IGBT transistor from STMicroelectronics will be perfect in your circuit. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 75000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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