STMicroelectronicsSTB26NM60NMOSFET
STB26NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R - Arrow.com
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 20 | |
| 165@10V | |
| 60@10V | |
| 60 | |
| 1800@50V | |
| 140000 | |
| 50 | |
| 25 | |
| 85 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) mm |
| Largeur du paquet | 9.35(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this STB26NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 140000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology.
| EDA / CAD Models |
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