STMicroelectronicsSTB26NM60NMOSFETs
STB26NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R - Arrow.com
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 20 | |
| 165@10V | |
| 60@10V | |
| 60 | |
| 1800@50V | |
| 140000 | |
| 50 | |
| 25 | |
| 85 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.6(Max) mm |
| Package Width | 9.35(Max) mm |
| Package Length | 10.4(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this STB26NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 140000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology.
| EDA / CAD Models |
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