STMicroelectronicsSTB120N4LF6MOSFET
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 80 | |
| 4@10V | |
| 80@10V | |
| 80 | |
| 4300@25V | |
| 110000 | |
| 45 | |
| 95 | |
| 125 | |
| 15 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) mm |
| Largeur du paquet | 9.35(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this STB120N4LF6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet vi technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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