STMicroelectronicsSTB120N4LF6MOSFETs
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 80 | |
| 4@10V | |
| 80@10V | |
| 80 | |
| 4300@25V | |
| 110000 | |
| 45 | |
| 95 | |
| 125 | |
| 15 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.6(Max) mm |
| Package Width | 9.35(Max) mm |
| Package Length | 10.4(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this STB120N4LF6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet vi technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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