STMicroelectronicsST13009GP BJT
Trans GP BJT NPN 400V 12A 100000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 400 | |
| 12 | |
| 1.2@1A@5A|1.6@1.6A@8A | |
| 2.5@3A@12A|0.85@0.8A@4A|0.9@1A@5A|1.25@1.6A@8A | |
| 12 | |
| 10@8A@5V | |
| 100000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) mm |
| Largeur du paquet | 4.6(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
STMicroelectronics brings you the solution to your high-voltage BJT needs with their NPN ST13009 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 12 V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 12 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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