VishaySQ3410EV-T1_GE3MOSFET
Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| 1500nm | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 8 | |
| 100 | |
| 1 | |
| 17.5@10V | |
| 14@10V | |
| 14 | |
| 804@15V | |
| 5000 | |
| 7 | |
| 12 | |
| 20 | |
| 9 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 |
Compared to traditional transistors, SQ3410EV-T1_GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 5000 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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