VishaySQ3410EV-T1_GE3MOSFETs
Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| 1500nm | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 8 | |
| 100 | |
| 1 | |
| 17.5@10V | |
| 14@10V | |
| 14 | |
| 804@15V | |
| 5000 | |
| 7 | |
| 12 | |
| 20 | |
| 9 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.65 |
| Package Length | 3.05 |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 |
Compared to traditional transistors, SQ3410EV-T1_GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 5000 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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