Infineon Technologies AGSPP18P06PHXKSA1MOSFET
Trans MOSFET P-CH 60V 18.7A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 18.7 | |
| 130@10V | |
| 21@10V | |
| 21 | |
| 690@25V | |
| 81100 | |
| 11 | |
| 5.8 | |
| 25 | |
| 12 | |
| -55 | |
| 175 | |
| Tube | |
| 102@10V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.68 mm |
| Largeur du paquet | 4.7 mm |
| Longueur du paquet | 10.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' SPP18P06PHXKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 81100 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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