Infineon Technologies AGSPP07N60C3XKSA1MOSFET
Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220AB Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.9 | |
| 7.3 | |
| 600@10V | |
| 21@10V | |
| 21 | |
| 790@25V | |
| 83000 | |
| 7 | |
| 3.5 | |
| 60 | |
| 6 | |
| -55 | |
| 150 | |
| Tube | |
| 540@10V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.25 mm |
| Largeur du paquet | 4.4 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Create an effective common drain amplifier using this SPP07N60C3XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 83000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
| EDA / CAD Models |
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