Infineon Technologies AGSPD09P06PLGBTMA1MOSFET
Trans MOSFET P-CH 60V 9.7A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 9.7 | |
| 250@10V | |
| 14@10V | |
| 14 | |
| 360@25V | |
| 42000 | |
| 89 | |
| 168 | |
| 49 | |
| 11 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Amplify electronic signals and switch between them with the help of Infineon Technologies' SPD09P06PLGBTMA1 power MOSFET. Its maximum power dissipation is 42000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology.
| EDA / CAD Models |
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