Infineon Technologies AGSPD08N50C3ATMA1MOSFET
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 3.9 | |
| 7.6 | |
| 100 | |
| 1 | |
| 600@10V | |
| 32@10V | |
| 32 | |
| 750@25V | |
| 83000 | |
| 7 | |
| 5 | |
| 60 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 500@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' SPD08N50C3ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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