Infineon Technologies AGSPB20N60C3ATMA1MOSFET
Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| SPB20N60C3ATMA1 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 3.9 | |
| -55 to 150 | |
| 20.7 | |
| 190@10V | |
| 87@10V | |
| 87 | |
| 2400@25V | |
| 208000 | |
| 4.5 | |
| 5 | |
| 67 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 |
| Largeur du paquet | 9.25 |
| Longueur du paquet | 10 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this SPB20N60C3ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 208000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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