Infineon Technologies AGSPB20N60C3ATMA1MOSFETs
Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| SPB20N60C3ATMA1 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 3.9 | |
| -55 to 150 | |
| 20.7 | |
| 190@10V | |
| 87@10V | |
| 87 | |
| 2400@25V | |
| 208000 | |
| 4.5 | |
| 5 | |
| 67 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.4 |
| Package Width | 9.25 |
| Package Length | 10 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this SPB20N60C3ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 208000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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