| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 0.9 | |
| -50 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 4.5@4.5V | |
| 93@4.5V|195@10V | |
| 195 | |
| 21 | |
| 12 | |
| 15 | |
| 8840@15V | |
| 900@15V | |
| 0.4 | |
| 835 | |
| 4800 | |
| 50|40 | |
| 50|5 | |
| 140|150 | |
| 45|15 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 8.1@1.8V|5.1@2.5V|3.5@4.5V | |
| 4.8 | |
| 200 | |
| 63 | |
| 0.8 | |
| 1.2 | |
| 30 | |
| 1.2 | |
| 0.5 | |
| 5.2 | |
| 8 | |
| 27 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.78(Max) mm |
| Largeur du paquet | 3.3 mm |
| Longueur du paquet | 3.3 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212-S |
| 8 | |
| Forme de sonde | No Lead |
Compared to traditional transistors, SISS23DN-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 4800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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