| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 0.9 | |
| -50 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 4.5@4.5V | |
| 93@4.5V|195@10V | |
| 195 | |
| 21 | |
| 12 | |
| 15 | |
| 8840@15V | |
| 900@15V | |
| 0.4 | |
| 835 | |
| 4800 | |
| 50|40 | |
| 50|5 | |
| 140|150 | |
| 45|15 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 8.1@1.8V|5.1@2.5V|3.5@4.5V | |
| 4.8 | |
| 200 | |
| 63 | |
| 0.8 | |
| 1.2 | |
| 30 | |
| 1.2 | |
| 0.5 | |
| 5.2 | |
| 8 | |
| 27 | |
| Mounting | Surface Mount |
| Package Height | 0.73 |
| Package Width | 3.3 |
| Package Length | 3.3 |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212-S |
| 8 | |
| Lead Shape | No Lead |
Compared to traditional transistors, SISS23DN-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 4800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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