| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 21 | |
| 100 | |
| 1 | |
| 180@10V | |
| 57@10V | |
| 57 | |
| 1920@100V | |
| 227000 | |
| 35 | |
| 27 | |
| 66 | |
| 18 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 20.7(Max) |
| Largeur du paquet | 5.31(Max) |
| Longueur du paquet | 15.87(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AC |
| 3 | |
| Forme de sonde | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The SIHG22N60E-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 227000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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