50-75% de réduction
VishaySI8424CDB-T1-E1MOSFET
Trans MOSFET N-CH 8V 10A 4-Pin Micro Foot T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 8 | |
| ±5 | |
| 0.8 | |
| 10 | |
| 100 | |
| 1 | |
| 20@4.5V | |
| 25@4.5V | |
| 2340@4V | |
| 2700 | |
| 20 | |
| 19 | |
| 73 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.31(Max) |
| Largeur du paquet | 1.6(Max) |
| Longueur du paquet | 1.6(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | Micro Foot |
| 4 | |
| Forme de sonde | Ball |
If you need to either amplify or switch between signals in your design, then Vishay's SI8424CDB-T1-E1 power MOSFET is for you. Its maximum power dissipation is 2700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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