| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 8 | |
| ±5 | |
| 0.8 | |
| 10 | |
| 100 | |
| 1 | |
| 20@4.5V | |
| 25@4.5V | |
| 2340@4V | |
| 2700 | |
| 20 | |
| 19 | |
| 73 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.31(Max) |
| Package Width | 1.6(Max) |
| Package Length | 1.6(Max) |
| PCB changed | 4 |
| Standard Package Name | BGA |
| Supplier Package | Micro Foot |
| 4 | |
| Lead Shape | Ball |
If you need to either amplify or switch between signals in your design, then Vishay's SI8424CDB-T1-E1 power MOSFET is for you. Its maximum power dissipation is 2700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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