| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 40 | |
| ±20 | |
| 3 | |
| 6 | |
| 60@10V | |
| 11@4.5V|20@10V | |
| 20 | |
| 5 | |
| 3 | |
| 15 | |
| 880@20V | |
| 100 | |
| 2500 | |
| 11|10 | |
| 13|100 | |
| 24|26 | |
| 42|6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 48@10V|65@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Increase the current or voltage in your circuit with this SI7905DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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