| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 3 | |
| 11 | |
| 9.2@10V | |
| 121@10V | |
| 121 | |
| 30.3 | |
| 19.2 | |
| 600 | |
| 5400 | |
| 100 | |
| 25 | |
| 200 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.5@10V|11@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The SI7463DP-T1-E3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 1900 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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