| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4.5 | |
| -55 to 150 | |
| 3.2 | |
| 100 | |
| 1 | |
| 80@10V | |
| 34@10V | |
| 34 | |
| 12 | |
| 7.5 | |
| 2 | |
| 75 | |
| 5200 | |
| 25 | |
| 20 | |
| 32 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 65@10V|70@6V | |
| 5.2 | |
| 40 | |
| 65 | |
| 0.75 | |
| 4.7 | |
| 70 | |
| 1.2 | |
| 0.2 | |
| 1.5 | |
| 20 | |
| 5.3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 5.89 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Amplify electronic signals and switch between them with the help of Vishay's SI7450DP-T1-E3 power MOSFET. Its maximum power dissipation is 1900 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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