| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.8 | |
| -50 to 150 | |
| 35 | |
| 100 | |
| 1 | |
| 11.4@10V | |
| 47.5@10V|24.6@4.5V | |
| 47.5 | |
| 12 | |
| 7.7 | |
| 30 | |
| 2230@15V | |
| 322@15V | |
| 1.5 | |
| 385 | |
| 3800 | |
| 14|10 | |
| 9|43 | |
| 30|36 | |
| 50|14 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 9.5@10V|16@4.5V | |
| 3.8 | |
| 60 | |
| 81 | |
| 0.8 | |
| 3.4 | |
| 31 | |
| 1.2 | |
| 0.4 | |
| 3.6 | |
| 20 | |
| 14.4 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
As an alternative to traditional transistors, the SI7129DN-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C.
| EDA / CAD Models |
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