| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 13.2 | |
| 134@10V | |
| 16.5@4.5V|35@10V | |
| 35 | |
| 1480@50V | |
| 3700 | |
| 40 | |
| 110 | |
| 51 | |
| 30 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI7113DN-T1-E3 power MOSFET can provide a solution. Its maximum power dissipation is 3700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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