| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Source | |
| Enhancement | |
| N|P | |
| 2 | |
| 20 | |
| ±12 | |
| 6.7@N Channel6.1@P Channel | |
| 22@4.5V@N Channel|30@4.5V@P Channel | |
| 15@10V|6.7@4.5V@N Channel|34@10V|17@4.5V@P Channel | |
| 15@N Channel|34@P Channel | |
| 850@10V@N Channel|1200@10V@P Channel | |
| 1100@N Channel|1200@P Channel | |
| 10@N Channel|15@P Channel | |
| 10@N Channel|25@P Channel | |
| 25@N Channel|45@P Channel | |
| 12@N Channel|30@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 4.4 mm |
| Longueur du paquet | 3 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSSOP |
| 8 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the SI6562CDQ-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1100@N Channel|1200@P Channel mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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