MOSFETs

SI6562CDQ-T1-GE3

Trans MOSFET N/P-CH 20V 6.7A 8-Pin TSSOP T/R

Vishay

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Dual Dual Source

• Channel Mode

  Enhancement

• Channel Type

  N|P

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  20

• Maximum Gate-Source Voltage (V)

  ±12

• Maximum Continuous Drain Current (A)

  6.7@N Channel6.1@P Channel

• Maximum Drain-Source Resistance (mOhm)

  22@4.5V@N Channel|30@4.5V@P Channel

• Typical Gate Charge @ Vgs (nC)

  15@10V|6.7@4.5V@N Channel|34@10V|17@4.5V@P Channel

• Typical Gate Charge @ 10V (nC)

  15@N Channel|34@P Channel

• Typical Input Capacitance @ Vds (pF)

  850@10V@N Channel|1200@10V@P Channel

• Maximum Power Dissipation (mW)

  1100@N Channel|1200@P Channel

• Typical Fall Time (ns)

  10@N Channel|15@P Channel

• Typical Rise Time (ns)

  10@N Channel|25@P Channel

• Typical Turn-Off Delay Time (ns)

  25@N Channel|45@P Channel

• Typical Turn-On Delay Time (ns)

  12@N Channel|30@P Channel

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1

• Package Width

  4.4

• Package Length

  3

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  TSSOP

• Pin Count

  8

• Lead Shape

  Gull-wing