| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.5 | |
| 5.97 | |
| 60@4.5V | |
| 7.53@4.5V|8.26@5V | |
| 2.37 | |
| 1.53 | |
| 9 | |
| 610@10V | |
| 132 | |
| 2000 | |
| 11 | |
| 59 | |
| 30 | |
| 27 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 69.2@2.7V|83@2.5V|50@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.65 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this SI3443CDV-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.