| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.5 | |
| 5.97 | |
| 60@4.5V | |
| 7.53@4.5V|8.26@5V | |
| 2.37 | |
| 1.53 | |
| 9 | |
| 610@10V | |
| 132 | |
| 2000 | |
| 11 | |
| 59 | |
| 30 | |
| 27 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 69.2@2.7V|83@2.5V|50@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1(Max) mm |
| Package Width | 1.65 mm |
| Package Length | 3.05 mm |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this SI3443CDV-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。