| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 0.85 | |
| -55 to 150 | |
| 3.9 | |
| 100 | |
| 1 | |
| 31@4.5V | |
| 7.5@4.5V | |
| 1.2 | |
| 1.4 | |
| 0.45 | |
| 100 | |
| 1250 | |
| 10 | |
| 30 | |
| 35 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 25@4.5V|30@2.5V|36@1.8V | |
| 1.25 | |
| 15 | |
| 166 | |
| 0.8 | |
| 1.4 | |
| 13 | |
| 1.2 | |
| 1.1 | |
| 3.3 | |
| 8 | |
| 5 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3.04(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this SI2312BDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.