| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 0.85 | |
| -55 to 150 | |
| 3.9 | |
| 100 | |
| 1 | |
| 31@4.5V | |
| 7.5@4.5V | |
| 1.2 | |
| 1.4 | |
| 0.45 | |
| 100 | |
| 1250 | |
| 10 | |
| 30 | |
| 35 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 25@4.5V|30@2.5V|36@1.8V | |
| 1.25 | |
| 15 | |
| 166 | |
| 0.8 | |
| 1.4 | |
| 13 | |
| 1.2 | |
| 1.1 | |
| 3.3 | |
| 8 | |
| 5 | |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3.04(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this SI2312BDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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