50-75% de réduction
VishaySI2304BDS-T1-E3MOSFET
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 2.6 | |
| 100 | |
| 0.5 | |
| 70@10V | |
| 2.6@5V|4.6@10V | |
| 4.6 | |
| 1.15 | |
| 0.8 | |
| 225@15V | |
| 28@15V | |
| 1.5 | |
| 50 | |
| 1080 | |
| 15 | |
| 12.5 | |
| 19 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 55@10V|80@4.5V | |
| 1.08 | |
| 10 | |
| 166 | |
| 0.8 | |
| 3.7 | |
| 1.2 | |
| 0.6 | |
| 6 | |
| 20 | |
| 3.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) mm |
| Largeur du paquet | 1.4(Max) mm |
| Longueur du paquet | 3.04(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common source amplifier using this SI2304BDS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.

