| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| 480nm | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 0.86 | |
| 350@4.5V | |
| 0.72@4.5V | |
| 34@20V | |
| 410 | |
| 6 | |
| 11 | |
| 11 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.35(Max) |
| Longueur du paquet | 2.2(Max) |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSSOP |
| 6 |
Make an effective common gate amplifier using this PMGD290XN,115 power MOSFET from NXP Semiconductors. Its maximum power dissipation is 410 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with tmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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