onsemiNVMFS4C01NT1GMOSFET
Trans MOSFET N-CH 30V 57A 5-Pin SO-FL EP T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 57 | |
| 100 | |
| 1 | |
| 0.67@10V | |
| 63@4.5V|139@10V | |
| 139 | |
| 10144@15V | |
| 3840 | |
| 36 | |
| 68 | |
| 53 | |
| 29 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.05(Max) |
| Largeur du paquet | 5.9 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 5 |
| Conditionnement du fournisseur | SO-FL EP |
| 5 | |
| Forme de sonde | Flat |
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NVMFS4C01NT1G power MOSFET is for you. Its maximum power dissipation is 3840 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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