onsemiNVMFS4C01NT1GMOSFETs
Trans MOSFET N-CH 30V 57A 5-Pin SO-FL EP T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 57 | |
| 100 | |
| 1 | |
| 0.67@10V | |
| 63@4.5V|139@10V | |
| 139 | |
| 10144@15V | |
| 3840 | |
| 36 | |
| 68 | |
| 53 | |
| 29 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) |
| Package Width | 5.9 |
| Package Length | 4.9 |
| PCB changed | 5 |
| Supplier Package | SO-FL EP |
| 5 | |
| Lead Shape | Flat |
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NVMFS4C01NT1G power MOSFET is for you. Its maximum power dissipation is 3840 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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