| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 20 | |
| ±6 | |
| 0.54@N Channel|0.43@P Channel | |
| 550@4.5V@N Channel|900@4.5V@P Channel | |
| 1.5@4.5V@N Channel|1.7@4.5V@P Channel | |
| 80@16V@N Channel|105@16V@P Channel | |
| 250 | |
| 8@N Channel|19@P Channel | |
| 4@N Channel|12@P Channel | |
| 35@P Channel|16@N Channel | |
| 6@N Channel|10@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.55 mm |
| Largeur du paquet | 1.2 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-563 |
| 6 | |
| Forme de sonde | Flat |
Use ON Semiconductor's NTZD3155CT1G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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