onsemiNSVMMUN2232LT1GBJT numérique
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 15@5mA@10V | |
| 4.7 | |
| 1 | |
| 0.25@1mA@10mA | |
| 400 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the NPN NSVMMUN2232LT1G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 15@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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