| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 20 | |
| 20 | |
| 7 | |
| 0.9@0.01A@1A | |
| 0.015@0.01A@0.1A|0.07@0.1A@1A|0.1@0.01A@1A|0.17@0.02A@2A|0.24@0.03A@3A|0.26@0.4A@4A | |
| 5 | |
| 100 | |
| 250@10mA@2V|250@500mA@2V|220@1A@2V|200@2A@2V|180@3A@2V | |
| 3000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | WDFN EP |
| 3 | |
| Forme de sonde | No Lead |
The three terminals of this PNP NSS20500UW3T2G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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