onsemiNDS331NMOSFET
Trans MOSFET N-CH 20V 1.3A 3-Pin SOT-23 T/R
The ON Semiconductor MOSFETs are very high density process is especially tailored to minimize on-state resistance. The maximum Drain Source Voltage of the product is 20 V and Gate Source Voltage is 8 V. Its maximum power dissipation is 500 mW. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• A, 20 V. RDS(ON) = 0.21 W @ VGS= 2.7 V RDS(ON) = 0.16 W @ VGS= 4.5 V
• Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
• High density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability.
Application:
• Notebook computers
• Portable phones
• PCMCIA cards
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um to 2um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| 8 | |
| 1 | |
| -55 to 150 | |
| 1.3 | |
| 100 | |
| 1 | |
| 160@4.5V | |
| 3.5@4.5V | |
| 3.5 | |
| 1 | |
| 0.3 | |
| 162@10V | |
| 28@10V | |
| 0.5 | |
| 85 | |
| 500 | |
| 5 | |
| 25 | |
| 10 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 110@4.5V|150@2.7V | |
| 0.5 | |
| 10 | |
| 270 | |
| 0.8 | |
| 1.45 | |
| 1.2 | |
| 0.7 | |
| 8 | |
| 1.3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.4 mm |
| Longueur du paquet | 2.92 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
| EDA / CAD Models |
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