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MOSFETs

NDS331N

Trans MOSFET N-CH 20V 1.3A 3-Pin SOT-23 T/R

onsemi
Datasheets 

The ON Semiconductor MOSFETs are very high density process is especially tailored to minimize on-state resistance. The maximum Drain Source Voltage of the product is 20 V and Gate Source Voltage is 8 V. Its maximum power dissipation is 500 mW. This MOSFET has an operating temperature range of -55°C to 150°C.

Features and Benefits:
• A, 20 V. RDS(ON) = 0.21 W @ VGS= 2.7 V RDS(ON) = 0.16 W @ VGS= 4.5 V
• Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
• High density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability.

Application:
• Notebook computers
• Portable phones
• PCMCIA cards

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    0.18um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    8
  • Maximum Gate Threshold Voltage (V)
    1
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    1.3
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    160@4.5V
  • Typical Gate Charge @ Vgs (nC)
    3.5@4.5V
  • Typical Gate Charge @ 10V (nC)
    3.5
  • Typical Gate to Drain Charge (nC)
    1
  • Typical Gate to Source Charge (nC)
    0.3
  • Typical Input Capacitance @ Vds (pF)
    162@10V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    28@10V
  • Minimum Gate Threshold Voltage (V)
    0.5
  • Typical Output Capacitance (pF)
    85
  • Maximum Power Dissipation (mW)
    500
  • Typical Fall Time (ns)
    5
  • Typical Rise Time (ns)
    25
  • Typical Turn-Off Delay Time (ns)
    10
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    110@4.5V|150@2.7V
  • Maximum Power Dissipation on PCB @ TC=25°C (W)
    0.5
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    10
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    270
  • Typical Diode Forward Voltage (V)
    0.8
  • Typical Gate Plateau Voltage (V)
    1.45
  • Maximum Diode Forward Voltage (V)
    1.2
  • Typical Gate Threshold Voltage (V)
    0.7
  • Maximum Positive Gate-Source Voltage (V)
    8
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    1.3
  • Mounting
    Surface Mount
  • Package Height
    0.94
  • Package Width
    1.4
  • Package Length
    2.92
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources