onsemiNCP5181DR2GPilotes de porte et de puissance
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8542.39.00.01 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Non-Inverting | |
| Full Bridge|Half Bridge | |
| 2 | |
| Independent | |
| MOSFET | |
| 2 | |
| 60 | |
| 40 | |
| 170 | |
| 3.3V|5V | |
| 10 | |
| 20 | |
| 6.5 | |
| 0.8(Max) | |
| 2.3(Min) | |
| 2.2(Typ) | |
| 5 | |
| 178 | |
| -40 | |
| 150 | |
| Under Voltage Lockout | |
| 35 | |
| 35 | |
| No | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
Ideal for high voltage transistors this NCP5181DR2G power driver manufactured by ON Semiconductor will help switch junction. This device has a maximum propagation delay time of 170 ns and a maximum power dissipation of 178 mW. Its maximum power dissipation is 178 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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