onsemiNCP5181DR2GGate driver e Driver di potenza
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8542.39.00.01 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Non-Inverting | |
| Full Bridge|Half Bridge | |
| 2 | |
| Independent | |
| MOSFET | |
| 2 | |
| 60 | |
| 40 | |
| 170 | |
| 3.3V|5V | |
| 10 | |
| 20 | |
| 6.5 | |
| 0.8(Max) | |
| 2.3(Min) | |
| 2.2(Typ) | |
| 5 | |
| 178 | |
| -40 | |
| 150 | |
| Under Voltage Lockout | |
| 35 | |
| 35 | |
| No | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Ideal for high voltage transistors this NCP5181DR2G power driver manufactured by ON Semiconductor will help switch junction. This device has a maximum propagation delay time of 170 ns and a maximum power dissipation of 178 mW. Its maximum power dissipation is 178 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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