| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 35@5mA@10V | |
| 10 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 310 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.85 mm |
| Largeur du paquet | 1.24 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 3 | |
| Forme de sonde | Gull-wing |
The PNP MUN5111T1G digital transistor from ON Semiconductor is your alternative to traditional BJTs in that it can provide digital signal processing power. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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