Diodes IncorporatedMMST5401-7-FGP BJT
Trans GP BJT PNP 150V 0.2A 200mW 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 160 | |
| 150 | |
| 5 | |
| -55 to 150 | |
| 1@1mA@10mA|1@5mA@50mA | |
| 0.2@1mA@10mA|0.5@5mA@50mA | |
| 0.2 | |
| 50 | |
| 50@1mA@5V|60@10mA@5V|50@50mA@5V | |
| 200 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.15 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-323 |
| 3 |
Implement this PNP MMST5401-7-F GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.