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onsemiMMBTH10-4LT1GBJT FR
Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Si | |
| Single | |
| 1 | |
| 30 | |
| 25 | |
| 20 to 30 | |
| 0.5@0.4mA@4mA | |
| 3 | |
| 100 | |
| 100 | |
| 120@4mA@10V | |
| 120 to 200 | |
| 556 | |
| 0.7(Max) | |
| 300 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTH10-4LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 3 V.
| EDA / CAD Models |
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