onsemiMMBTA13LT1GDarlington BJT
Trans Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 10 | |
| 0.3 | |
| 0.1 | |
| 125(Min) | |
| 1.5@0.1mA@100mA | |
| 10000@100mA@5V|5000@10mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
If you require a higher current gain value in your circuit, then the NPN MMBTA13LT1G Darlington transistor, developed by ON Semiconductor, is for you. This Darlington transistor array's maximum emitter base voltage is 10 V. This product's maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@100mA@5 V|5000@10mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V.
| EDA / CAD Models |
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