| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 15 | |
| 4.5 | |
| -55 to 150 | |
| 0.85@1mA@10mA|1.15@3mA@30mA|1.6@10mA@100mA | |
| 0.2@1mA@10mA|0.25@3mA@30mA|0.5@10mA@100mA | |
| 0.2 | |
| 400 | |
| 40@10mA@0.35V|30@30mA@0.4V|20@100mA@1V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MMBT2369ALT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V.
| EDA / CAD Models |
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