| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 450 | |
| 9 | |
| 1.1@0.2A@2A|1.25@0.9A@4.5A | |
| 0.6@0.2A@2A|0.7@0.9A@4.5A | |
| 8 | |
| 14@1A@5V|6@4.5A@1V|11@2A@1V|10@10mA@5V | |
| 45000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 16.12(Max) mm |
| Largeur du paquet | 4.9(Max) mm |
| Longueur du paquet | 10.63(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Compared to other transistors, the NPN MJF18008G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 9 V. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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