onsemiMJF18008GGP BJT

Trans GP BJT NPN 450V 8A 45000mW 3-Pin(3+Tab) TO-220FP Tube

Compared to other transistors, the NPN MJF18008G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 9 V. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -65 ยฐC and a maximum of 150 ยฐC.

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