onsemiMC33151VDR2GPilotes de porte et de puissance
Driver 1.5A 2-OUT High Speed Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 31(Typ) | |
| 32(Typ) | |
| 36(Typ) | |
| CMOS|LSTTL | |
| 6.5 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 1000 | |
| -40 | |
| 125 | |
| Under Voltage Lockout | |
| No | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
The MC33151VDR2G power driver from ON Semiconductor can provide management of your transistors and switches. This device has a maximum propagation delay time of 100 ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
| EDA / CAD Models |
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